arXiv 1301.1952
Ohmic Contact Formation Between Metal and AlGaN/GaN Heterostructure via Graphene Insertion
By Pil Sung Park, Kongara M. Reddy, et al.
Published 2013-01-09
Discussion
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A simple method for the creation of Ohmic contact to 2-D electron gas (2DEG) in AlGaN/GaN high electron-mobility transistors (HEMTs) using Cr/Graphene layer is demonstrated. A weak temperature dependence of this Ohmic contact observed in the range 77 to 300 K precludes thermionic emission or trap-assisted hopping as possible carrier-transport mechanisms. It is suggested that the Cr/Graphene combination acts akin to…